Micron Technology DRAM SDRAM-DDR3, Part #: MT41K128M16JT-125 AAT:K | Dynamic random access memory | DEX GE WETB VSH:VS-U5FX300FA60

VSH:VS-U5FX300FA60

RAM content is retained

Features: • Direct Sensor Input • High Output Torque • Low Pointer Flutter • High Input Impedance • Overvoltage Protection • Return to Zero • Internally Fused Leads in PDIP−16 and SO−20W Packages • These Devices are Pb−Free

MRC:P58-00061

5M10U50567

Micron Technology DRAM SDRAM-DDR3, Part #: MT41K128M16JT-125 AAT:K | Dynamic random access memory | DEX GE WETB VSH:VS-U5FX300FA60Micron Technology DRAM SDRAM DDR3L, Part #: MT41K128M16JT 125 AAT: K features: VDD = VDDQ = 1. 35V (1. 2831. 45V) Backward compatible to VDD = VDDQ = 1. 5V 0. 075V Differential bidirectional data strobe 8n bit prefetch architecture Differential clock inputs (CK, CK#) 8 internal banks Nominal and dynamic on die termination (ODT) for data, strobe, and mask signals Programmable CAS (READ) latency (CL) Programmable posted CAS additive latency (AL)