Micron Technology DRAM SDRAM, Part #MT40A256M16LY-062E AIT:F | Dynamic random access memory | DEX Tesla such as the TPS9261x-Q1

such as the TPS9261x-Q1

MT44K32M36RB-107E:A TR

Gen Apollo

GEC:5374763

50 State Emission Requirements

Micron Technology DRAM SDRAM, Part #MT40A256M16LY-062E AIT:F | Dynamic random access memory | DEX Tesla such as the TPS9261x-Q1Micron Technology DRAM SDRAM DDR4, Part #MT40A256M16LY 062E AIT: F Features VDD = VDDQ = 1. 2V 60mV VPP = 2. 5V 125mV +250mV On die, internal, adjustable VREFDQ generation 1. 2V pseudo open drain I O Refresh maximum interval time at TC temperature range: 64ms at 40C to 85C 32ms at 85C to 95C 16ms at 96C to 105C 8ms at 106C to 125C 16 internal banks ( x8): 4 groups of 4 banks each 8 internal banks (x16): 2 groups of 4 banks each 8n bit prefetch