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Micron Technology DRAM SDRAM-DDR4, Part #: MT41K512M8DA-093:P | Dynamic random access memory | DEX RF Amplifier Battery-powered instrumentation

SKU: 10317143047

4.6
USD12.99 USD46.99

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Ships within 48 hours · Estimated delivery Aug 13 - Aug 18

Description

Battery-powered instrumentation

ï‚„ 2Mbit Serial ROM

Undervoltage Lockout

the BCM56370 is the first Ethernet switch ASIC on the market that simultaneously addresses the rapid increase in bandwidth demand and the transformation of the enterprise network from a simple

External shutdown is included

Micron Technology DRAM SDRAM-DDR4, Part #: MT41K512M8DA-093:P | Dynamic random access memory | DEX RF Amplifier Battery-powered instrumentationMicron Technology DRAM SDRAM DDR3L, Part #: MT41K512M8DA 093: P features: VDD = VDDQ = 1. 35V (1. 2831. 45V) Backward compatible to VDD = VDDQ = 1. 5V 0. 075V Supports DDR3L devices to be backward compatible in 1. 5V applications Differential bidirectional data strobe 8n bit prefetch architecture Differential clock inputs (CK, CK#) 8 internal banks Nominal and dynamic on die termination (ODT) for data, strobe, and mask signals Programmable CAS (READ)

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